 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 1/4 HT666 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications. TO-92 Features * High Frequency Current Gain * High Speed Switching Transistor Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) ............................................................................................................... 625 mW * Maximum Voltages and Currents (TA=25C) BVCBO Collector to Base Voltage......................................................................................................................... 75 V BVCEO Collector to Emitter Voltage...................................................................................................................... 40 V BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V IC Collector Current ........................................................................................................................................ 600 mA Electrical Characteristics (TA=25C) Symbol BVCBO *BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 *hFE6 fT Min. 75 40 6 35 50 75 100 40 50 300 Typ. Max. 10 10 50 300 1 1.2 2 300 Unit V V V nA nA nA mV V V V MHz IC=10uA IC=100mA IE=10uA VCB=60V VCB=60V, VEB(off)=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100uA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=1V, IC=150mA IC=20mA, VCE=20V, f=100MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% HT666 HSMC Product Specification Test Conditions HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve DC Current Gain 1000 10000 Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 2/4 Gain Bandwidth Product & Collector Current 100 Gain Bandwidth Product (MHz) 1000 hFE 10 100 1 1 10 100 1000 10 1 Collector current (mA) 10 Collector Current (mA) 100 Collector-Emitter Saturation Voltage 10.0 800 Total Power Dissipation & Ambient Temperature Total Power Dissipation (mW) Saturation Voltage (V) 1.0 600 400 0.1 200 0.0 1 10 100 1000 0 0 25 50 75 100 125 150 175 200 Collector Current (mA) Ta-Ambient Temperature Base-Emitter Saturation Voltage 10 V(BE) Saturation Voltage 1 0.1 1 10 100 1000 Collector current (mA) HT666 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 3/4 2 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None H 666 T 3 Date Code Control Code Note: Green label is used for pb-free packing C D Pin Style: 1.Emitter 2.Collector 3.Base Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I 1 2 3 Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5 *2 *2 H I E F G *: Typical, Unit: mm 1 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm H2 H2 H2A H2A D2 A H3 H4 H L L1 H1 F1F2 T2 T T1 P1 P P2 D1 D W1 W Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HT666 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HT666 HSMC Product Specification |
Price & Availability of HT666
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |